features z extremely fast switching speed z low forward voltage ? 0.35 v (typ) @ i f = 10 madc marking: jv maximum ratings and electrical characteristics, single diode @t a =25 parameter symbol limits unit dc reverse voltage v r 30 v forward current i f 200 ma repetitive peak forward current i frm 300 ma non-repetitive peak forward current (t=1us) i fsm 600 ma total device dissipation p d 200 mw thermal resistance junction to ambient r ja 635 /w junction temperature t j 150 storage temperature t stg 150 electrical ratings @t a =25 parameter symbol min. typ. max. unit conditions reverse breakdown voltage v (br)r 30 i r =10ua v f1 0.22 0.24 i f =0.1ma v f2 0.41 0.5 i f =30ma v f3 0.52 0.8 i f =100ma v f4 0.29 0.32 i f =1.0ma forward voltage v f5 0.35 0.40 v i f =10ma reverse recovery time t rr 5 ns i f =i r =10madc,i r(rec) =1madc reverse current i r 0.5 2.0 a v r =25v total capacitance c t 7.6 10 pf v r =1v,f=1mhz 1.6?.1 1.2?.05 0.8?.05 cathode mark 0.6?.1 0 . 1 2 0 . 0 5 s o d - 5 2 3 0 . 3 0 . 0 5 dimensions in millimeters any changing of specification will not be informed individual BAT54X 30 volt silicon hot-carrier detector surface mount schottky barrier diode http://www.secosgmbh.com elektronische bauelemente 30-may-2007 rev. a page 1 of 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
t y p i c a l c h a r a c t e r i s t i c s any changing of specification will not be informed individual BAT54X 30 volt silicon hot-carrier detector surface mount schottky barrier diode http://www.secosgmbh.com elektronische bauelemente 30-may-2007 rev. a page 1 of 2
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